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BY228/13.BY228/15
Vishay Telefunken
Silicon Mesa Rectifiers
Features
D Glass passivated junction D Hermetically sealed package
Applications
High voltage rectifier Efficiency diode in horizontal deflection circuits High voltage rectifier Efficiency diode in horizontal deflection circuits
94 9588
Absolute Maximum Ratings
Tj = 25_C Parameter Peak reverse voltage, g non repetitive Reverse voltage g Peak forward surge current Average forward current Junction temperature Storage temperature range tp=10ms, half sinewave Test Conditions Type BY228/13 BY228/15 BY228/13 BY228/15 Symbol VRSM VRSM VR VR IFSM IFAV Tj Tstg Value 1300 1500 1000 1200 50 3 140 -55...+150 Unit V V V V A A C C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board with spacing 37.5mm Symbol RthJA Value 70 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Test Conditions IF=5A VR=1000V VR=1200V VR=1000V, Tj=140C VR=1200V, Tj=140C IF=1A, -diF/dt=0.05A/ms Type Symbol VF IR IR IR IR trr Min Typ Max 1.5 5 5 140 140 20 Unit V
BY228/13 BY228/15 BY228/13 BY228/15
2 2
Total reverse recovery time
mA mA mA mA ms
Document Number 86004 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 1 (3)
BY228/13.BY228/15
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W ) 40 IF - Forward Current ( A ) 100 Tj = 25C 10 Scattering Limit 1
30
20 l 10 l
0.1
0 0 5 10 15
TL=constant 20 25 30
0.01 0
94 9083
0.6
1.2
1.8
2.4
3.0
94 9081
l - Lead Length ( mm )
VF - Forward Voltage ( V )
Figure 1. Typ. Thermal Resistance vs. Lead Length
1000 I R - Reverse Current ( mA ) Scattering Limit 100
Figure 3. Forward Current vs. Forward Voltage
10
1 VR = VR RM 0 40 80 120 160 200
0.1
94 9082
Tj - Junction Temperature ( C )
Figure 2. Reverse Current vs. Junction Temperature
Dimensions in mm
Sintered Glass Case SOD 64 Weight max. 1.0 g Cathode Identification 4.3 max.
technical drawings according to DIN specifications
1.35 max.
26 min.
4.2 max.
26 min.
94 9587
www.vishay.de * FaxBack +1-408-970-5600 2 (3)
Document Number 86004 Rev. 2, 24-Jun-98
BY228/13.BY228/15
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86004 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 3 (3)

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